Effective mass

Bandstructure Effects in Silicon Nanowire Hole Transport

Nanoelectronics / Nanowire / Nanotechnology / Field effect transistors / Anisotropy / Nanowires / Integer quantum hall effect / Dispersion / Band Structure / Quantization / Si / Degradation / PMOs / First-Order Logic / Electron Transport / Valence Bands / Electrons / Capacitance / Electrical Conductivity / Cross Section / Tight Binding / Effective mass / Ballistic Transport / Hole Mobility / Poisson Equation / Charge Distribution / Electrical And Electronic Engineering / Anisotropia / Spin Orbit Coupling / Nanowires / Integer quantum hall effect / Dispersion / Band Structure / Quantization / Si / Degradation / PMOs / First-Order Logic / Electron Transport / Valence Bands / Electrons / Capacitance / Electrical Conductivity / Cross Section / Tight Binding / Effective mass / Ballistic Transport / Hole Mobility / Poisson Equation / Charge Distribution / Electrical And Electronic Engineering / Anisotropia / Spin Orbit Coupling

Parametrization of a silicon nanowire effective mass model from sp 3 d 5 s* orbital basis calculations

Materials Engineering / Condensed Matter Physics / Nanowires / Resource Limitation / Semiconductor science / Cross Section / Tight Binding / Device Simulation / Effective mass / Cross Section / Tight Binding / Device Simulation / Effective mass

Magnetotransport properties of ferromagnetic LaMnO3+δ nano-sized crystals

Engineering / Mechanical Engineering / Condensed Matter Physics / Applied Physics / Mathematical Sciences / Mott metal-insulator transition / Physical sciences / Magnetic Properties / Activation Energy / Temperature Dependence / Superlattice / Anomalous Hall effect / Curie temperature / Grain Boundary / Magnetoresistance / Effective mass / Magnetism and Magnetic Materials / Low Temperature / Hall effect / Mott metal-insulator transition / Physical sciences / Magnetic Properties / Activation Energy / Temperature Dependence / Superlattice / Anomalous Hall effect / Curie temperature / Grain Boundary / Magnetoresistance / Effective mass / Magnetism and Magnetic Materials / Low Temperature / Hall effect

Magnetotransport properties of ferromagnetic LaMnO 3+ δ nano-sized crystals

Engineering / Mechanical Engineering / Condensed Matter Physics / Applied Physics / Mathematical Sciences / Mott metal-insulator transition / Physical sciences / Magnetic Properties / Activation Energy / Temperature Dependence / Superlattice / Anomalous Hall effect / Curie temperature / Grain Boundary / Magnetoresistance / Effective mass / Magnetism and Magnetic Materials / Low Temperature / Hall effect / Mott metal-insulator transition / Physical sciences / Magnetic Properties / Activation Energy / Temperature Dependence / Superlattice / Anomalous Hall effect / Curie temperature / Grain Boundary / Magnetoresistance / Effective mass / Magnetism and Magnetic Materials / Low Temperature / Hall effect

Method for tight-binding parametrization: Application to silicon nanostructures

Band Structure / Parametric Design / Solid State electronic devices / Physical sciences / Spin-Orbit Coupling / CHEMICAL SCIENCES / Tight Binding / Effective mass / CHEMICAL SCIENCES / Tight Binding / Effective mass

Building semiconductor nanostructures atom by atom

Microelectronics / Electronic Structure / Tight Binding / Effective mass / PROBABILITY DENSITY / Force Field Analysis / Electrical And Electronic Engineering / Electronic Structure Calculation / Force Field Analysis / Electrical And Electronic Engineering / Electronic Structure Calculation

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